Cathodoluminescence Studies of Nanoindented CdZnTe Single Crystal Substrates for Analysis of Residual Stresses and Deformation Behaviour

Abstract

Nanoindentation-induced residual stresses were analysed on (111) Te face CdZnTe single-crystal substrates in this study. CdZnTe substrates were subjected to nanoindentation using cube corner indenter geometry with a peak load of 10 mN. Loading rates of 1 mN/s and 5 mN/s were used in the experiments, with a holding time of 10 s at peak load. Residual stresses on the indented region were analysed from load-displacement curves and explained using dislocation generation and elastic recovery mechanisms. Residual stresses were found to be of compressive type, just on the indented surface. The slip lines along the slip directions of this material were clearly visible in the FE-SEM images of the indents. Indents and surrounding surfaces were characterized using the Cathodoluminescence (CL) technique. CL mapping of the indented surface revealed the dislocation generation and their propagation behaviour just beneath the indenter as well as in the surrounding surfaces. The dislocations act as non-radiative recombination centres and quench the CL intensity locally. Dark lines were explained as the presence of dislocations in the material. CL mapping analysis shows that both the rosette glide and tetrahedral glide of dislocations are the primary deformation mechanisms present in CdZnTe. A rosette structure was observed in the CL mapping. CL spectra at 300 K of un-deformed CdZnTe show a peak at 810 nm wavelength, which corresponds to near-band-edge emission. After indentation, the CL spectra show the peak intensity at 814 nm and 823 nm wavelengths at the edge of the indents created with a loading rate of 1 mN/s and 5 mN/s, respectively. These peak shifts from 810 nm were attributed to the tensile residual stresses present in the indented material.