Affiliation:
1. Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan
Abstract
Based on CdTe and CdZnTe detectors a number of promising devices were created, which found their application in metallurgy, in solving the problems of customs control and control of nuclear materials, as well as matrix detectors created for the manufacture of medical devices and devices for space research. Detectors, created on the basis of polycrystalline semiconductor CdTe and CdZnTe films with a columnar structure on a molybdenum substrate with a thickness d = 30150 μm, had a specific resistance p > 10^5 10^8 W-cm. The energy resolution of the CdTe and CdZnTe detectors at room temperature reached ~ 5 keV on the 59.6 keV 241Am line.
Publisher
Joint-Stock Company Scientific and Production Association - ORION
Subject
General Physics and Astronomy
Reference9 articles.
1. J. S. Iwanczyk, B. E. Patt, Y. J. Wang, and A. Kh. Khusainov, Nucl. Instr. and Meth. A 380, 186 (1996).
2. Zh. V. Gumenyuk-Sychevskaya and E. A. Melezhik, Applied Physics, No. 1, 101 (2012) [in Russian].
3. A. Niemela, H. Sipila, and V. I. Ivanov, IEEE Trans. Nucl. Sci. 43, 1476 (1996).
4. A. D. Lavietes, J. H. McQuaid, and T. J. Paulus, Nucl. Instr. and Meth. in Phys. Res. A 380, 406 (1996).
5. A. V. Galochkin, Applied Physics, No. 3, 65 (2017) [in Russian].
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