Influence of the content of impurities and structural defects on the properties of the Cd0.9Mn0.1Te:V-based detector-Reference-Cited by-同舟云学术

Influence of the content of impurities and structural defects on the properties of the Cd0.9Mn0.1Te:V-based detector

Published:2023 Issue:3-4 Volume: Page:52-58
ISSN:2309-9992
Container-title:Technology and design in electronic equipment
language:
Short-container-title:TKEA

Author:

Kondrik O. I.¹,Solopikhin D. А.¹

Affiliation:

1. National Science Center “Kharkiv Institute of Physics and Technology”

Abstract

The paper highlights the results of quantitative studies of the influence of the content of impurities and structural defects on the electrophysical and detector properties of Cd0.9Mn0.1Te:V — resistivity and concentrations of free charge carriers, life time of nonequilibrium charge carriers τ, charge collection efficiency η. The optimal ranges of energy change and deep donor concentration, which ensure a high-resistive state and acceptable values of τ and η, are established. The authors study the compensation of cadmium vacancies with vanadium admixture.

Publisher

Private Enterprise, Politehperiodika

Reference23 articles.

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