Ferroelectric control of a Mott insulator-Reference-Cited by-同舟云学术

Ferroelectric control of a Mott insulator

Published:2013-10-03 Issue:1 Volume:3 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Yamada Hiroyuki,Marinova Maya,Altuntas Philippe,Crassous Arnaud,Bégon-Lours Laura,Fusil Stéphane,Jacquet Eric,Garcia Vincent,Bouzehouane Karim,Gloter Alexandre,Villegas Javier E.,Barthélémy Agnès,Bibes Manuel

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep02834.pdf

Reference22 articles.

1. Ahn, C. H. et al. Electrostatic modification of novel materials. Rev. Mod. Phys. 78, 1185–1212 (2006).

2. Imada, M., Fujimori, A. & Tokura, Y. Metal-insulator transitions. Rev. Mod. Phys. 70, 1039–1263 (1998).

3. Ueno, K. et al. Electric-field-induced superconductivity in an insulator. Nature Mater. 7, 855–8 (2008).

4. Bibes, M. Nanoferronics is a winning combination. Nature Mater. 11, 354–7 (2012).

5. Crassous, A. et al. Nanoscale electrostatic manipulation of magnetic flux quanta in ferroelectric/superconductor BiFeO3/YBa2CuO7−δ heterostructures. Phys. Rev. Lett. 95, 247002 (2011).

Cited by 59 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High electroresistance in all-oxide ferroelectric tunnel junctions enabled by a narrow bandgap Mott insulator electrode;Applied Physics Letters;2024-09-02

2. Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices;Nature Communications;2024-03-01

3. Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering;Nature Communications;2023-12-12

4. Nanoelectronics Using Metal–Insulator Transition;Advanced Materials;2023-11-30

5. Interface-type tunable oxygen ion dynamics for physical reservoir computing;Nature Communications;2023-11-07