Zhang et al. reply
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/nature12590.pdf
Reference5 articles.
1. Luo, J. et al. Low-voltage magnetoresistance in silicon. Nature 501, http://dx.doi.org/10.1038/nature12589 (2013)
2. Wan, C. H., Zhang, X. Z., Gao, X. L., Wang, J. M. & Tan, X. Y. Geometrical enhancement of low-field magnetoresistance in silicon. Nature 477, 304–307 (2011)
3. Hu, J. S. & Rosenbaum, T. F. Classical and quantum routes to linear magnetoresistance. Nature Mater. 7, 697–700 (2008)
4. Parish, M. M. & Littlewood, P. B. Non-saturating magnetoresistance in heavily disordered semiconductors. Nature 426, 162–165 (2003)
5. Baker, D. R. & Heremans, J. P. Linear geometrical magnetoresistance effect: Influence of geometry and material composition. Phys. Rev. B 59, 13927–13942 (1999)
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