Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer-Reference-Cited by-同舟云学术

Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer

Published:2015-01-19 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Nadda Kanika,Kumar M. Jagadesh

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep07860.pdf

Reference40 articles.

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2. Sun, I. S. M. et al. Lateral high-speed bipolar transistors on SOI for RF SoC applications. IEEE Trans. Electron Dev. 52, 1376–1383 (2005).

3. Nii, H. et al. A novel lateral bipolar transistor with 67 GHz f (max) on thin-film SOI for RF analog applications. IEEE Trans. Electron Dev. 47, 1536–1541 (2000).

4. Voegeli, B. T. et al. High Performance, Low Complexity Vertical PNP BJT Integrated in a 0.18gm SiGe BiCMOS Technology. Proc. IEEE BCTM 136–140 (2005).

5. El-Kareh, B. et al. A 5V complementary-SiGe BiCMOS technology for high-speed precision analog circuits. Proc. IEEE BCTM 211–214 (2003).

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