Shock-Resistibility of MEMS-Based Inertial Microswitch under Reverse Directional Ultra-High g Acceleration for IoT Applications-Reference-Cited by-同舟云学术

Shock-Resistibility of MEMS-Based Inertial Microswitch under Reverse Directional Ultra-High g Acceleration for IoT Applications

Published:2017-03-31 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Xu Qiu,Yang Zhuoqing,Sun Yunna,Lai Liyan,Jin Zhiyu,Ding Guifu,Zhao Xiaolin,Yao Jinyuan,Wang Jing

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep45512.pdf

Reference15 articles.

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2. Z. Yang et al. Design, simulation and characterization of an inertia microswitch fabricated by non-silicon surface micromachining. J. Micromech. Microeng. 17, 1589–1604 (2007).

3. Z. Yang et al. A MEMS inertial switch with bridge-type elastic fixed electrode for long duration contact. IEEE Transaction on Electron. 55, 2492–2497 (2008).

4. T. Matsunaga & M. Esashi . Acceleration switch with extended holding time using squeeze film effect for side airbag systems. Sens. Actuators A. 100, 10–17 (2002).

5. L. Zimmermann et al. Airbag application: a microsystem including a silicon capacitive accelerometer, CMOS switched capacitor electronic and true self-test capability. Sens. Actuators A 3, 190–195 (1995).

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