Light-Emitting Devices Based on Top-down Fabricated GaAs Quantum Nanodisks-Reference-Cited by-同舟云学术

Light-Emitting Devices Based on Top-down Fabricated GaAs Quantum Nanodisks

Published:2015-03-20 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Higo Akio,Kiba Takayuki,Tamura Yosuke,Thomas Cedric,Takayama Junichi,Wang Yunpeng,Sodabanlu Hassanet,Sugiyama Masakazu,Nakano Yoshiaki,Yamashita Ichiro,Murayama Akihiro,Samukawa Seiji

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep09371.pdf

Reference29 articles.

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4. Eliseev, G. P. et al. Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes. Appl. Phys. Lett. 77, 262 (2000).

5. Otsubo, K. et al. Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments. Jpn. J. Appl. Phys. Part 2 43, L1124 (2004).

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