High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep04558.pdf
Reference29 articles.
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4. Emtsev, K. V. et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nat Mater 8, 203–207 (2009).
5. Virojanadara, C. et al. Homogeneous large-area graphene layer growth on 6H-SiC(0001). Phys. Rev. B 78, 245403 (2008).
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