Observation of the intrinsic bandgap behaviour in as-grown epitaxial twisted graphene-Reference-Cited by-同舟云学术

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Observation of the intrinsic bandgap behaviour in as-grown epitaxial twisted graphene

Published:2015-01-06 Issue:1 Volume:6 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Park Jeongho,Mitchel William C.,Elhamri Said,Grazulis Lawrence,Hoelscher John,Mahalingam Krishnamurthy,Hwang Choongyu,Mo Sung-Kwan,Lee Jonghoon

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms6677.pdf

Reference35 articles.

1. Lopes dos Santos, J. M. B., Peres, N. M. R. & Castro Neto, A. H. Graphene bilayer with a twist: electronic structure. Phys. Rev. Lett. 99, 256802 (2007).

2. Trambly de Laissardie`re, G., Mayou, D. & Magaud, L. Localization of Dirac electrons in rotated graphene bilayers. Nano Lett. 10, 804–808 (2010).

3. Li, G. et al. Observation of Van Hove singularities in twisted graphene layers. Nat. Phys. 6, 109–113 (2010).

4. Muniz, A. R. & Maroudas, D. Opening and tuning of the bandgap by the formation of diamond supperlattices in twisted bilayer graphene. Phys. Rev. B 86, 075404 (2012).

5. Muniz, A. R. & Maroudas, D. Formation of fullerence superlattices by interlayer bonding in twisted bilayer graphene. J. Appl. Phys. 111, 043513 (2012).

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