Controllable growth of vertically aligned graphene on C-face SiC-Reference-Cited by-同舟云学术

Controllable growth of vertically aligned graphene on C-face SiC

Published:2016-10-06 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Liu Yu,Chen Lianlian,Hilliard Donovan,Huang Qing-song,Liu Fang,Wang Mao,Böttger Roman,Hübner René,N’Diaye Alpha T.,Arenholz Elke,Heera Viton,Skorupa Wolfgang,Zhou Shengqiang

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep34814.pdf

Reference46 articles.

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3. Lu, W. et al. Bipolar Carrier Transfer Channels in Epitaxial Graphene/Sic Core-Shell Heterojunction for Efficient Photocatalytic Hydrogen Evolution. Adv. Mater. 27, 7986–7991 (2015).

4. Zhang, Y. et al. Label-Free Electrochemical Immunosensor Based on Enhanced Signal Amplification between Au@Pd and Cofe2o4/Graphene Nanohybrid. Sci. Rep. 6, 23391 (2016).

5. Xing, Z. et al. One-Pot Hydrothermal Synthesis of Nitrogen-Doped Graphene as High-Performance Anode Materials for Lithium Ion Batteries. Sci. Rep. 6, 26146 (2016).

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