Author:
Lam Brian,Zhou Wendi,Kelley Shana O.,Sargent Edward H.
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry
Reference40 articles.
1. Bower, R. & Dill, R. Insulated gate field effect transistors fabricated using the gate as source-drain mask (Electron Devices Meeting, IEEE) 12, 102–104 (1966).
2. Fair, R. B. History of some early developments in ion-implantation technology leading to silicon transistor manufacturing. Proc. IEEE 86, 111–137 (1998).
3. Chen, X. et al. Electrical nanogap devices for biosensing. Mater. Today 13, 28–41 (2010).
4. Kyu Kim, S. et al. Nanogap biosensors for electrical and label-free detection of biomolecular interactions. Nanotechnology 20, 455502 (2009).
5. Roy, S., Chen, X., Li, M., Peng, Y. & Anariba, F. Mass-produced nanogap sensor arrays for ultrasensitive detection of DNA. J. Am. Chem. Soc. 131, 12211–12217 (2009).
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