Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells-Reference-Cited by-同舟云学术

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Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells

Published:2016-09 Issue:9 Volume:8 Page:e305-e305
ISSN:1884-4049
Container-title:NPG Asia Materials
language:en
Short-container-title:NPG Asia Mater

Author:

Yu Ze,Perera Ishanie R,Daeneke Torben,Makuta Satoshi,Tachibana Yasuhiro,Jasieniak Jacek J,Mishra Amaresh,Bäuerle Peter,Spiccia Leone,Bach Udo

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science,Modeling and Simulation,Condensed Matter Physics,General Materials Science,Modeling and Simulation

Link

http://www.nature.com/articles/am201689.pdf

Reference30 articles.

1. Sun, X., Shi, Y., Ji, H., Li, X., Cai, S. & Zheng, C. Nanocasting synthesis of ordered mesoporous indium tin oxide (ITO) materials with controllable particle size and high thermal stability. J. Alloys Compd. 545, 5–11 (2012).

2. Slocombe, D., Porch, A., Pepper, M. & Edwards, P. P. The Mott transition and optimal performance of transparent conducting oxides in thin-film solar cells. Energy Environ. Sci. 5, 5387–5391 (2012).

3. Ellmer, K. Past achievements and future challenges in the development of optically transparent electrodes. Nat. Photonics 6, 809–817 (2012).

4. Kim, H., Gilmore, C. M., Piqué, A., Horwitz, J. S., Mattoussi, H., Murata, H., Kafafi, J. H. & Chrisey, D. B. Electrical, optical, and structural properties of indium-tin-oxide thin films for organic light-emitting devices. J. Appl. Phys. 86, 6451–6461 (1999).

5. Hamberg, I., Granqvist, C. G., Berggren, K. F., Sernelius, B. E. & Engström, L. Band-gap widening in heavily Sn-doped In2O3 . Phys. Rev. B 30, 3240–3249 (1984).

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