Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration-Reference-Cited by-同舟云学术

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Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration

Published:2016-01-19 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Park Jun-Young,Moon Dong-Il,Seol Myeong-Lok,Jeon Chang-Hoon,Jeon Gwang-Jae,Han Jin-Woo,Kim Choong-Ki,Park Sang-Jae,Lee Hee Chul,Choi Yang-Kyu

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep19314.pdf

Reference33 articles.

1. Street, R. A. Thin-film transistors. Adv. Mater. 21, 2007–2022 (2009).

2. Colinge, J. P. et al. Nanowire transistors without junctions. Nat. Nanotechnol. 5, 225–229 (2010).

3. Kim, D. R., Lee, C. H., Weisse, J. M., Cho, I. S. & Zheng, X. Shrinking and growing: Grain boundary density reduction for efficient polysilicon thin-film solar cells. Nano Lett. 12, 6485–6491 (2012).

4. Delrio, F. W. et al. The role of van der Waals forces in adhesion of micromachined surfaces. Nat. Mater. 4, 629–634 (2005).

5. Guo, L. A Silicon Single-Electron Transistor Memory Operating at Room Temperature. Science 275, 649–651 (1997).

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