Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep16612.pdf
Reference29 articles.
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3. Im, K.-S. et al. Normally off GaN MOSFET based on AlGaN/GaN heterostructure with extremely high 2DEG density grown on silicon substrate. IEEE Electron Device Lett. 31, 192–194 (2010).
4. Wu, Y.-R. et al. Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs. IEEE J. Sel. Topics Quantum Electron. 15, 1226–1233 (2009).
5. Tanaka, S., Iwai, S. & Aoyagi, Y. Self-assembling GaN quantum dots on AlxGa1-xN surface using a surfactant. Appl. Phys. Lett. 69, 4096–4098 (1996).
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