Ultrafast Intrinsic Photoresponse and Direct Evidence of Sub-gap States in Liquid Phase Exfoliated MoS2Thin Films-Reference-Cited by-同舟云学术

Ultrafast Intrinsic Photoresponse and Direct Evidence of Sub-gap States in Liquid Phase Exfoliated MoS2Thin Films

Published:2015-07-15 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Ghosh Sujoy,Winchester Andrew,Muchharla Baleeswaraiah,Wasala Milinda,Feng Simin,Elias Ana Laura,Krishna M. Bala Murali,Harada Takaaki,Chin Catherine,Dani Keshav,Kar Swastik,Terrones Mauricio,Talapatra Saikat

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep11272.pdf

Reference35 articles.

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2. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).

3. Kim, S. et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat. Commun. 3, 1011 (2012).

4. Zhang, Y., Ye, J., Matsuhashi, Y. & Iwasa, Y. Ambipolar MoS2 thin flake transistors. Nano Lett. 12, 1136–40 (2012).

5. Yin, Z. et al. Single-layer MoS2 phototransistors. ACS Nano 6, 74–80 (2012).

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