Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction-Reference-Cited by-同舟云学术

Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction

Published:2023-01-18 Issue:7944 Volume:613 Page:485-489
ISSN:0028-0836
Container-title:Nature
language:en
Short-container-title:Nature

Author:

Qin Peixin,Yan Han,Wang Xiaoning,Chen Hongyu,Meng Ziang,Dong Jianting,Zhu Meng,Cai Jialin,Feng Zexin,Zhou Xiaorong,Liu Li,Zhang Tianli,Zeng Zhongming^ORCID,Zhang Jia^ORCID,Jiang Chengbao^ORCID,Liu Zhiqi^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

https://www.nature.com/articles/s41586-022-05461-y.pdf

Reference50 articles.

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2. Park, B. G. et al. A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction. Nat. Mater. 10, 347–351 (2011).

3. MacDonald, A. H. & Tsoi, M. Antiferromagnetic metal spintronics. Phil. Trans. R. Soc. A 369, 3098–3114 (2011).

4. Marti, X. et al. Room-temperature antiferromagnetic memory resistor. Nat. Mater. 13, 367–374 (2014).

5. Chen, H., Niu, Q. & MacDonald, A. H. Anomalous Hall effect arising from noncollinear antiferromagnetism. Phys. Rev. Lett. 112, 017205 (2014).

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