Origins of structural and electronic transitions in disordered silicon-Reference-Cited by-同舟云学术

Origins of structural and electronic transitions in disordered silicon

Published:2021-01-06 Issue:7840 Volume:589 Page:59-64
ISSN:0028-0836
Container-title:Nature
language:en
Short-container-title:Nature

Author:

Deringer Volker L.^ORCID,Bernstein Noam^ORCID,Csányi Gábor^ORCID,Ben Mahmoud Chiheb^ORCID,Ceriotti Michele^ORCID,Wilson Mark^ORCID,Drabold David A.^ORCID,Elliott Stephen R.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41586-020-03072-z.pdf

Reference90 articles.

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2. Sheng, H. W., Luo, W. K., Alamgir, F. M., Bai, J. M. & Ma, E. Atomic packing and short-to-medium-range order in metallic glasses. Nature 439, 419–425 (2006).

3. Xie, R. et al. Hyperuniformity in amorphous silicon based on the measurement of the infinite-wavelength limit of the structure factor. Proc. Natl Acad. Sci. USA 110, 13250–13254 (2013).

4. Keen, D. A. & Goodwin, A. L. The crystallography of correlated disorder. Nature 521, 303–309 (2015).

5. Hedler, A., Klaumünzer, S. L. & Wesch, W. Amorphous silicon exhibits a glass transition. Nat. Mater. 3, 804–809 (2004).

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