The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy-Reference-Cited by-同舟云学术

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The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy

Published:2016-07-22 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Vancsó Péter,Magda Gábor Zsolt,Pető János,Noh Ji-Young,Kim Yong-Sung,Hwang Chanyong,Biró László P.,Tapasztó Levente

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep29726.pdf

Reference35 articles.

1. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).

2. Yazyev, O. V. & Kis, A. MoS2 and semiconductors in the flatland. Mater. Today 18, 20–30 (2015).

3. Splendiani, A. et al. Emerging Photoluminescence in Monolayer MoS2 Nano Lett. 10, 1271–1275 (2010).

4. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically Thin MoS2: A New Direct-Gap Semiconductor. Phys. Rev. Lett. 105, 136805 (2010).

5. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011).

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