Boosting photoresponse in silicon metal-semiconductor-metal photodetector using semiconducting quantum dots
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep37857.pdf
Reference19 articles.
1. Moglestue, C. et al. Picosecond pulse response characteristics of GaAs metal‐semiconductor‐metal photodetectors. J. Appl. Phys. 70, 2435 (1991).
2. Weckler, G. P. Operation of p-n Junction Photodetectors in a Photon Flux Integrating Mode. IEEE J. Solid-State Circuits 2, 65–73 (1967).
3. Koscielniak, W. C., Pelouard, J. L. & Littlejohn, M. A. Dynamic behavior of photocarriers in a GaAs metal‐semiconductor‐metal photodetector with sub‐half‐micron electrode pattern. Appl. Phys. Lett. 54, 567 (1989).
4. Soole, J. B. D. & Schumacher, H. InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications. IEEE J. Quantum Electron. 27, 737–752 (1991).
5. Xue, H. et al. TiO2 based metal-semiconductor-metal ultraviolet photodetectors. Appl. Phys. Lett. 90, 201118 (2007).
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