Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation-Reference-Cited by-同舟云学术

Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

Published:2019-03-13 Issue:1 Volume:10 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Liu Donghua,Chen Xiaosong,Yan Yaping,Zhang Zhongwei,Jin Zhepeng,Yi Kongyang^ORCID,Zhang Cong,Zheng Yujie,Wang Yao,Yang Jun,Xu Xiangfan^ORCID,Chen Jie^ORCID,Lu Yunhao,Wei Dapeng^ORCID,Wee Andrew Thye Shen^ORCID,Wei Dacheng^ORCID

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/s41467-019-09016-0.pdf

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3. Allain, A. & KisElectron, A. Electron and hole mobilities in single layer WSe2. ACS Nano 8, 7180–7185 (2014).

4. Campbell, P. M. et al. Field-effect transistors based on wafer-scale,highly uniform few-layer p-type WSe2. Nanoscale 8, 2268–2276 (2016).

5. Lin, Y. et al. Realizing large-scale, electronic-grade two dimensional semiconductors. ACS Nano 12, 965–975 (2018).

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