Stable and efficient pure blue quantum-dot LEDs enabled by inserting an anti-oxidation layer

Author:

Zhang Wenjing,Li Bo,Chang Chun,Chen Fei,Zhang Qin,Lin Qingli,Wang Lei,Yan Jinhang,Wang Fangfang,Chong Yihua,Du ZuliangORCID,Fan FengjiaORCID,Shen HuaibinORCID

Abstract

AbstractThe efficiency and stability of red and green quantum-dot light-emitting diodes have already met the requirements for commercialization in displays. However, the poor stability of the blue ones, particularly pure blue color, is hindering the commercialization of full-color quantum-dot light-emitting diode technology. Severe hole accumulation at the blue quantum-dot/hole-transport layer interface makes the hole-transport layer prone to oxidation, limiting the device operational lifetime. Here, we propose inserting an anti-oxidation layer (poly(p-phenylene benzobisoxazole)) between this interface to take in some holes from the hole-transport layer, which mitigates the oxidation-induced device degradation, enabling a T50 (time for the luminance decreasing by 50%) of more than 41,000 h with an initial brightness of 100 cd m−2 in pure blue devices. Meanwhile, the inserted transition layer facilitates hole injection and helps reduce electron leakage, leading to a peak external quantum efficiency of 23%.

Publisher

Springer Science and Business Media LLC

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