Divacancy and resonance level enables high thermoelectric performance in n-type SnSe polycrystals

Author:

Gong Yaru,Dou Wei,Lu Bochen,Zhang Xuemei,Zhu He,Ying PanORCID,Zhang Qingtang,Liu Yuqi,Li Yanan,Huang Xinqi,Iqbal Muhammad Faisal,Zhang Shihua,Li Di,Zhang YongshengORCID,Wu HaijunORCID,Tang GuodongORCID

Abstract

AbstractN-type polycrystalline SnSe is considered as a highly promising candidates for thermoelectric applications due to facile processing, machinability, and scalability. However, existing efforts do not enable a peak ZT value exceeding 2.0 in n-type polycrystalline SnSe. Here, we realized a significant ZT enhancement by leveraging the synergistic effects of divacancy defect and introducing resonance level into the conduction band. The resonance level and increased density of states resulting from tungsten boost the Seebeck coefficient. The combination of the enhanced electrical conductivity (achieved by increasing carrier concentration through WCl6 doping and Se vacancies) and large Seebeck coefficient lead to a high power factor. Microstructural analyses reveal that the co-existence of divacancy defects (Se vacancies and Sn vacancies) and endotaxial W- and Cl-rich nanoprecipitates scatter phonons effectively, resulting in ultralow lattice conductivity. Ultimately, a record-high peak ZT of 2.2 at 773 K is achieved in n-type SnSe0.92 + 0.03WCl6.

Publisher

Springer Science and Business Media LLC

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