Contact-electrification-activated artificial afferents at femtojoule energy

Author:

Yu Jinran,Gao Guoyun,Huang Jinrong,Yang Xixi,Han Jing,Zhang Huai,Chen Youhui,Zhao Chunlin,Sun QijunORCID,Wang Zhong LinORCID

Abstract

AbstractLow power electronics endowed with artificial intelligence and biological afferent characters are beneficial to neuromorphic sensory network. Highly distributed synaptic sensory neurons are more readily driven by portable, distributed, and ubiquitous power sources. Here, we report a contact-electrification-activated artificial afferent at femtojoule energy. Upon the contact-electrification effect, the induced triboelectric signals activate the ion-gel-gated MoS2 postsynaptic transistor, endowing the artificial afferent with the adaptive capacity to carry out spatiotemporal recognition/sensation on external stimuli (e.g., displacements, pressures and touch patterns). The decay time of the synaptic device is in the range of sensory memory stage. The energy dissipation of the artificial afferents is significantly reduced to 11.9 fJ per spike. Furthermore, the artificial afferents are demonstrated to be capable of recognizing the spatiotemporal information of touch patterns. This work is of great significance for the construction of next-generation neuromorphic sensory network, self-powered biomimetic electronics and intelligent interactive equipment.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

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