Flash healing of laser-induced graphene

Author:

Cheng Le,Yeung Chi Shun,Huang Libei,Ye Ge,Yan Jie,Li WanpengORCID,Yiu Chunki,Chen Fu-RongORCID,Shen Hanchen,Tang Ben ZhongORCID,Ren YangORCID,Yu XingeORCID,Ye RuquanORCID

Abstract

AbstractThe advancement of laser-induced graphene (LIG) technology has streamlined the fabrications of flexible graphene devices. However, the ultrafast kinetics triggered by laser irradiation generates intrinsic amorphous characteristics, leading to high resistivity and compromised performance in electronic devices. Healing graphene defects in specific patterns is technologically challenging by conventional methods. Herein, we report the rapid rectification of LIG’s topological defects by flash Joule heating in milliseconds (referred to as F-LIG), whilst preserving its overall structure and porosity. The F-LIG exhibits a decreased ID/IG ratio from 0.84 – 0.33 and increased crystalline domain from Raman analysis, coupled with a 5-fold surge in conductivity. Pair distribution function and atomic-resolution imaging delineate a broader-range order of F-LIG with a shorter C-C bond of 1.425 Å. The improved crystallinity and conductivity of F-LIG with excellent flexibility enables its utilization in high-performance soft electronics and low-voltage disinfections. Notably, our F-LIG/polydimethylsiloxane strain sensor exhibits a gauge factor of 129.3 within 10% strain, which outperforms pristine LIG by 800%, showcasing significant potential for human-machine interfaces.

Funder

Shenzhen Science and Technology Innovation Commission

Research Grants Council, University Grants Committee

Fisheries Enhancement Fund

Publisher

Springer Science and Business Media LLC

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