Excited-state spin-resonance spectroscopy of V$${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ defect centers in hexagonal boron nitride

Author:

Mathur NikhilORCID,Mukherjee ArunabhORCID,Gao Xingyu,Luo Jialun,McCullian Brendan A.ORCID,Li TongcangORCID,Vamivakas A. NickORCID,Fuchs Gregory D.ORCID

Abstract

AbstractThe recently discovered spin-active boron vacancy (V$${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ B ) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent ODMR spectroscopy to probe spin within the orbital excited-state. Our experiments determine the excited-state spin Hamiltonian, including a room-temperature zero-field splitting of 2.1 GHz and a g-factor similar to that of the ground-state. We confirm that the resonance is associated with spin rotation in the excited-state using pulsed ODMR measurements, and we observe Zeeman-mediated level anti-crossings in both the orbital ground- and excited-state. Our observation of a single set of excited-state spin-triplet resonance from 10 to 300 K is suggestive of symmetry-lowering of the defect system from D3h to C2v. Additionally, the excited-state ODMR has strong temperature dependence of both contrast and transverse anisotropy splitting, enabling promising avenues for quantum sensing.

Funder

NSF | Directorate for Mathematical & Physical Sciences | Division of Materials Research

United States Department of Defense | Defense Advanced Research Projects Agency

NSF | ENG/OAD | Division of Electrical, Communications and Cyber Systems

United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry,Multidisciplinary

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