Role of ferroelectric polarization during growth of highly strained ferroelectric materials

Author:

Liu RuiORCID,Ulbrandt Jeffrey G.,Hsing Hsiang-Chun,Gura Anna,Bein Benjamin,Sun Alec,Pan Charles,Bertino Giulia,Lai Amanda,Cheng Kaize,Doyle Eli,Evans-Lutterodt Kenneth,Headrick Randall L.ORCID,Dawber Matthew

Abstract

AbstractIn ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure. Here we show that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical properties and domain structures. This is studied by focusing on the properties of BaTiO3 thin films grown on very thin layers of PbTiO3 using x-ray diffraction, piezoforce microscopy, electrical characterization and rapid in-situ x-ray diffraction reciprocal space maps during the growth using synchrotron radiation. Using a simple model we show that the changes in growth are driven by the energy cost for the top material to sustain the polarization imposed upon it by the underlying layer, and these effects may be expected to occur in other multilayer systems where polarization is present during growth. This motivates the concept of polarization engineering as a complementary approach to strain engineering.

Funder

National Science Foundation

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

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