Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Author:

Shi ZhiyuanORCID,Wang Xiujun,Li Qingtian,Yang Peng,Lu Guangyuan,Jiang Ren,Wang Huishan,Zhang Chao,Cong ChunxiaoORCID,Liu ZhiORCID,Wu Tianru,Wang HaominORCID,Yu Qingkai,Xie Xiaoming

Abstract

AbstractMultilayer hexagonal boron nitride (h-BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer h-BN in large areas is still limited in terms of crystallinity, thickness and stacking order. Here, we report a vapor–liquid–solid growth (VLSG) method to achieve uniform multilayer h-BN by using a molten Fe82B18 alloy and N2 as reactants. Liquid Fe82B18 not only supplies boron but also continuously dissociates nitrogen atoms from the N2 vapor to support direct h-BN growth on a sapphire substrate; therefore, the VLSG method delivers high-quality h-BN multilayers with a controllable thickness. Further investigation of the phase evolution of the Fe-B-N system reveals that isothermal segregation dominates the growth of the h-BN. The approach herein demonstrates the feasibility for large-area fabrication of van der Waals 2D materials and heterostructures.

Funder

Science and Technology Commission of Shanghai Municipality

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

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