Abstract
AbstractImage sensors with internal computing capability enable in-sensor computing that can significantly reduce the communication latency and power consumption for machine vision in distributed systems and robotics. Two-dimensional semiconductors have many advantages in realizing such intelligent vision sensors because of their tunable electrical and optical properties and amenability for heterogeneous integration. Here, we report a multifunctional infrared image sensor based on an array of black phosphorous programmable phototransistors (bP-PPT). By controlling the stored charges in the gate dielectric layers electrically and optically, the bP-PPT’s electrical conductance and photoresponsivity can be locally or remotely programmed with 5-bit precision to implement an in-sensor convolutional neural network (CNN). The sensor array can receive optical images transmitted over a broad spectral range in the infrared and perform inference computation to process and recognize the images with 92% accuracy. The demonstrated bP image sensor array can be scaled up to build a more complex vision-sensory neural network, which will find many promising applications for distributed and remote multispectral sensing.
Funder
National Science Foundation
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry,Multidisciplinary
Reference59 articles.
1. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).
2. Xia, F., Wang, H. & Jia, Y. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014).
3. Britnell, L. et al. Strong light-matter interactions in heterostructures of atomically thin films. Science 340, 1311–1314 (2013).
4. Liu, L. et al. Ultrafast non-volatile flash memory based on van der Waals heterostructures. Nat. Nanotechnol. 16, 874–881 (2021).
5. Wu, L. et al. Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices. Nat. Nanotechnol. 16, 882–887 (2021).
Cited by
60 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献