Orientation Dependent Thermal Conductance in Single-Layer MoS2
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep02209.pdf
Reference35 articles.
1. Joensen, P., Crozier, E. D., Alberding, N. & Frindt, R. F. A study of single-layer and restacked MoS2 by x-ray diffraction and x-ray absorption spectroscopy. Journal of Physics C: Solid State Physics 20, 4043 (1987).
2. Helveg, S. et al. Atomic-scale structure of single-layer MoS2 nanoclusters. Physical Review Letters 84, 951 (2000).
3. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Physical Review Letters 105, 136805 (2010).
4. Lee, C. et al. Anomalous lattice vibrations of single-and few-layer MoS2 . ACS Nano 4, 26952700 (2010).
5. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nature Nanotechnology 6, 147 (2011).
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