Stability and its mechanism in Ag/CoOx/Ag interface-type resistive switching device-Reference-Cited by-同舟云学术

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Stability and its mechanism in Ag/CoOx/Ag interface-type resistive switching device

Published:2016-10-19 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Fu Jianbo,Hua Muxin,Ding Shilei,Chen Xuegang,Wu Rui,Liu Shunquan,Han Jingzhi,Wang Changsheng,Du Honglin,Yang Yingchang,Yang Jinbo

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep35630.pdf

Reference33 articles.

1. Sawa, A. Resistive switching in transition metal oxides. Mater. Today 11, 28 (2008).

2. Waser, R. & Aono, M. Nanoionics-based resistive switching memories. Nat. Mater. 6, 833 (2007).

3. Lau, H. K. & Leung, C. W. Nonvolatile multilevel memory effect by resistive switching in manganite thin films. J. Appl. Phys. 104, 123705 (2008).

4. Yun, C. et al. Magnetic manipulation by resistance switching in CeO2/PrBa2Cu3O7/Pt heterostructure: The role of oxygen vacancies. Appl. Phys. Lett. 103, 262411 (2013).

5. Nakamura, T., Homma, K. & Tachibana, K. Thin film deposition of metal oxides in resistance switching devices: electrode material dependence of resistance switching in manganite films. Nanoscale Res. Lett. 8, 76 (2013).

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