Correlation versus hybridization gap in CaMn$$_{2}$$Bi$$_{2}$$

Author:

Lane Christopher,Piva M. M.,Rosa P. F. S.,Zhu Jian-Xin

Abstract

AbstractWe study the interplay between electronic correlations and hybridization in the low-energy electronic structure of CaMn$$_2$$ 2 Bi$$_2$$ 2 , a candidate hybridization-gap semiconductor. By employing a DFT+U approach we find both the antiferromagnetic Néel order and band gap in good agreement with the corresponding experimental values. Under hydrostatic pressure, we find a crossover from hybridization gap to charge-transfer insulting physics due to the delicate balance of hybridization and correlations. Increasing the pressure above $$P_c=4$$ P c = 4 GPa we find a simultaneous pressure-induced volume collapse, plane-to-chain, insulator to metal transition. Finally, we have also analyzed the topology in the antiferromagnetic CaMn$$_2$$ 2 Bi$$_2$$ 2 for all pressures studied.

Funder

Basic Energy Sciences

Fundação de Amparo à Pesquisa do Estado de São Paulo

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

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