Suppression for an intermediate phase in ZnSb films by NiO-doping

Author:

Li Chao,Wang Guoxiang,Qi Dongfeng,Shi Daotian,Zhang Xianghua,Wang Hui

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Reference25 articles.

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2. Rios, C. et al. Intergated all-photonic non-volatile multi-level memory. Nat. Photonics. 9, 725–732 (2015).

3. Zhou, X. et al. Phase Change Memory materials by design: a strain engineering approach. Adv. Mater. 28, 3007–3016 (2016).

4. Wang, G. X. et al. Phase change behaviors of Zn-doped Ge2Sb2Te5 films. Appl. Phys. Lett. 101, 051906 (2012).

5. Zhou, X. et al. Understanding phase-change behaviors of carbon-doped Ge2Sb2Te5 for phase-change memory application. ACS Appl. Mater. Interfaces. 6, 14207–14214 (2014).

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