Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-32214-7.pdf
Reference24 articles.
1. Geim, A. K. & Novoselov, K. S. The rise of graphene. Nature Mat. 6, 183 (2007).
2. Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S. & Geim, A. K. The electronic properties of graphene. Rev. Mod. Phys. 81, 109 (2009).
3. Das Sarma, S., Adam, S., Hwang, E. H. & Rossi, E. Electronic transport in two-dimensional graphene. Rev. Mod. Phys. 83, 407 (2011).
4. Martin, J. et al. Observation of electron-hole puddles in graphene using a scanning single-electron transistor. Nature Phys. 4, 144 (2008).
5. Bolotin, K. I. et al. Ultrahigh electron mobility in suspended graphene. Solid State Commun. 146, 351 (2008).
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