Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs-Reference-Cited by-同舟云学术

Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

Published:2021-04-21 Issue:1 Volume:11 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Capua F. Di,Campajola M.,Fiore D.,Gasparini L.,Sarnelli E.,Aloisio A.

Abstract

AbstractThis paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by different junction types: the first structure is constituted by a P+/Nwell junction, while the second is formed by a Pwell/Niso junction. RTS occurrence has been measured in about one thousand SPAD pixels and the differences addressed in two layouts are motivated and discussed. Hypotheses on the RTS origin are drawn by analyzing the RTS time constants and the RTS occurrence evolution as a function of the annealing temperature.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-021-87962-w.pdf

Reference44 articles.

1. Rochas, A. et al. Single photon detector fabricated in a complementary metal-oxide-semiconductor high-voltage technology. Rev. Sci. Instrum. 74, 3263–3270. https://doi.org/10.1063/1.1584083 (2003).

2. Braga, L. H. C. et al. A fully digital $$8\times 16$$ sipm array for pet applications with per-pixel tdcs and real-time energy output. IEEE J. Solid-State Circuits 49, 301–314. https://doi.org/10.1109/jssc.2013.2284351 (2014).

3. Gersbach, M. et al.Time correlated two-photon fluorescence imaging with arrays of solid-state single photon detectorshttps://doi.org/10.1109/CLEOE-IQEC.2007.4386631 (2007).

4. Rae, B. et al. A microsystem for time-resolved fluorescence analysis using cmos single-photon avalanche diodes and micro-leds. https://doi.org/10.1109/ISSCC.2008.4523109 (2008).

5. Cova, S., Longoni, A. & Andreoni, A. Towards picosecond resolution with single-photon avalanche diodes. Rev. Sci. Instrum. 52, 408–412. https://doi.org/10.1063/1.1136594 (1998).

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