An atomic carbon source for high temperature molecular beam epitaxy of graphene-Reference-Cited by-同舟云学术

An atomic carbon source for high temperature molecular beam epitaxy of graphene

Published:2017-07-26 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Albar J. D.,Summerfield A.^ORCID,Cheng T. S.,Davies A.,Smith E. F.,Khlobystov A. N.,Mellor C. J.,Taniguchi T.,Watanabe K.^ORCID,Foxon C. T.,Eaves L.,Beton P. H.^ORCID,Novikov S. V.^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-017-07021-1.pdf

Reference58 articles.

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2. Wei, D. C. et al. Synthesis of N-doped graphene by chemical vapor deposition and its electrical properties. Nano Lett. 9, 1752–1758 (2009).

3. Wang, Y. et al. Electrochemical delamination of CVD grown graphene film: toward the recyclable use of copper catalyst. ASC Nano 5, 9927–9933 (2011).

4. Li, X. et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324, 1312–1314 (2009).

5. Moreau, E. et al. Graphene growth by molecular beam epitaxy on the carbon-face of SiC. Appl. Phys. Lett. 97, 241907 (2010).

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