The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering-Reference-Cited by-同舟云学术

The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering

Published:2017-11-27 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Wiesner M.,Trzaskowska A.,Mroz B.,Charpentier S.,Wang S.,Song Y.,Lombardi F.^ORCID,Lucignano P.,Benedek G.,Campi D.,Bernasconi M.,Guinea F.,Tagliacozzo A.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-017-16313-5.pdf

Reference72 articles.

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3. Wang, H., Pei, Y. A., LaLonde, D. & Snyder, G. J. Weak electron–phonon coupling contributing to high thermoelectric performance in n-type PbSe. Proc. Natl. Acad. Sci. USA 109, 9705–9709 (2012).

4. Tritt, T. M. Holey and unholey semiconductors. Science 283, 804–805 (1999).

5. Chen, T. et al. Thermoelectric Bi2Te3-improved charge collection for high-performance dye-sensitized solar cells. Energy Environ. Sci. 5, 6294–6298 (2012).

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