Author:
Belykh V. V.,Yakovlev D. R.,Bayer M.
Abstract
AbstractWe develop a simple method for measuring the electron spin relaxation times $$T_1$$T1, $$T_2$$T2 and $$T_2^*$$T2∗ in semiconductors and demonstrate its exemplary application to n-type GaAs. Using an abrupt variation of the magnetic field acting on electron spins, we detect the spin evolution by measuring the Faraday rotation of a short laser pulse. Depending on the magnetic field orientation, this allows us to measure either the longitudinal spin relaxation time $$T_1$$T1 or the inhomogeneous transverse spin dephasing time $$T_2^*$$T2∗. In order to determine the homogeneous spin coherence time $$T_2$$T2, we apply a pulse of an oscillating radiofrequency (rf) field resonant with the Larmor frequency and detect the subsequent decay of the spin precession. The amplitude of the rf-driven spin precession is significantly enhanced upon additional optical pumping along the magnetic field.
Funder
Russian Science Foundation
Deutsche Forschungsgemeinschaft
Publisher
Springer Science and Business Media LLC
Reference39 articles.
1. Dyakonov, M. I. (ed.) Spin Physics in Semiconductors (Springer, Cham, 2017).
2. Goldfarb, D. & Stoll, S. (eds) EPR Spectroscopy: Fundamentals and Methods (Wiley, New York, 2018).
3. Meier, F. & Zakharchenya, B. P. (eds) Optical Orientation (Horth-Holland, Amsterdam, 1984).
4. Kikkawa, J. M. & Awschalom, D. D. Resonant spin amplification in n-type GaAs. Phys. Rev. Lett. 80, 4313. https://doi.org/10.1103/PhysRevLett.80.4313 (1998).
5. Saeed, F. et al. Single-beam optical measurement of spin dynamics in CdTe/(Cd, Mg)Te quantum wells. Phys. Rev. B 98, 075308. https://doi.org/10.1103/PhysRevB.98.075308 (2018).
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献