Author:
Belykh V. V.,Yakovlev D. R.,Bayer M.
Abstract
AbstractWe develop a simple method for measuring the electron spin relaxation times $$T_1$$T1, $$T_2$$T2 and $$T_2^*$$T2∗ in semiconductors and demonstrate its exemplary application to n-type GaAs. Using an abrupt variation of the magnetic field acting on electron spins, we detect the spin evolution by measuring the Faraday rotation of a short laser pulse. Depending on the magnetic field orientation, this allows us to measure either the longitudinal spin relaxation time $$T_1$$T1 or the inhomogeneous transverse spin dephasing time $$T_2^*$$T2∗. In order to determine the homogeneous spin coherence time $$T_2$$T2, we apply a pulse of an oscillating radiofrequency (rf) field resonant with the Larmor frequency and detect the subsequent decay of the spin precession. The amplitude of the rf-driven spin precession is significantly enhanced upon additional optical pumping along the magnetic field.
Funder
Russian Science Foundation
Deutsche Forschungsgemeinschaft
Publisher
Springer Science and Business Media LLC
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