Author:
Wang Pei-Hsun,Chen Chien-Hung,Hou Nien-Lin,Cao Jia-Hao,Zheng He-Yuan,Chen Hung-Wen
Abstract
AbstractWe present a method for modification of silicon nitride (Si3N4) waveguide resonators using femtosecond laser annealing. The quality (Q) factor of the waveguide resonators can be improved by approximately 1.3 times after annealing. Notably, waveguides that originally had a high Q value maintained their quality after the annealing process. However, those with a lower initial Q value experienced a noticeable improvement post-annealing. To characterize the annealing effect, the surface morphologies of Si3N4 films, both pre- and post-annealing, were analyzed using atomic force microscopy. The findings suggest a potential enhancement in surface refinement. Furthermore, Raman spectroscopy confirmed that the Si3N4 film's composition remains largely consistent with its original state within the annealing power range of 0.6–1.6 W. This research underscores the potential of femtosecond laser annealing as an efficient, cost-effective, and localized technique for fabricating low-loss integrated photonics.
Publisher
Springer Science and Business Media LLC
Reference43 articles.
1. Bell, A. E. Review and analysis of laser annealing. RCA Rev. 40, 295 (1979).
2. Van Vechten, J. A., Tsu, R. & Saris, F. W. Nonthermal pulsed laser annealing of Si; plasma annealing. Phys. Lett. A 74, 422–426 (1979).
3. Poate, J.M. & Mayer, J.W. Laser Annealing of Semiconductors; Academic Press: New York, NY, USA (1982).
4. Miyasaka, M. & Stoemenos, J. Excimer laser annealing of amorphous and solid-phase-crystallized silicon films. J. Appl. Phys. 86, 5556–5565 (1999).
5. Sakaike, K., Higashi, S., Murakami, H. & Miyazaki, S. Crystallization of amorphous Ge films induced by semiconductor diode laser annealing. Thin Solid Film. 516, 3595–3600 (2008).