Author:
Iwasaki Takuya,Moriyama Satoshi,Ahmad Nurul Fariha,Komatsu Katsuyoshi,Watanabe Kenji,Taniguchi Takashi,Wakayama Yutaka,Hashim Abdul Manaf,Morita Yoshifumi,Nakaharai Shu
Abstract
AbstractWe report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures > ~ 40 K, whereas it becomes positive for low temperatures ≤ ~ 40 K, which implies an interplay of quantum interferences in Dirac materials. The elastic scattering mechanism in hBN/Gr/hBN stacks contrasts with that of conventional graphene on SiO2, and our ultra-clean graphene device shows nonzero magnetoconductance for high temperatures of up to 300 K.
Funder
Japan Society for the Promotion of Science
Ministry of Education, Culture, Sports, Science and Technology
Japan Science and Technology Agency
Publisher
Springer Science and Business Media LLC
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