Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-26751-4.pdf
Reference45 articles.
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3. Fiori, G. et al. Electronics based on two-dimensional materials. Nature nanotechnology. 9(10), 768–79 (2014).
4. Ganatra, R. & Zhang, Q. Few-layer MoS2: a promising layered semiconductor. ACS nano. 8, 4074–99 (2014).
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