Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity

Author:

Uzlu BurkayORCID,Wang ZhenxingORCID,Lukas Sebastian,Otto Martin,Lemme Max C.ORCID,Neumaier DanielORCID

Abstract

AbstractWe demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: (1) The sensor sensitivity can be doubled by utilizing both n- and p-type conductance. (2) A static magnetic field can be read out at frequencies in the kHz range, where the 1/f noise is lower compared to the static case. (3) The off-set voltage in the Hall signal can be reduced. This significantly increases the signal-to-noise ratio compared to Hall sensors without a gate electrode. A minimal detectable magnetic field Bmin down to $$290\,{\rm{nT}}/\surd {\rm{Hz}}$$290nT/Hz and sensitivity up to 0.55 V/VT was found for Hall sensors working on flexible polyimide (PI) substrates. This clearly outperforms state-of-the-art flexible Hall sensors and is comparable to the values obtained by the best rigid III/V semiconductor Hall sensors.

Funder

European Commission / Graphene Flagship

German Science Foundation (DFG) / FFlexCom Project

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

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