Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
https://www.nature.com/articles/s41598-021-99821-9.pdf
Reference5 articles.
1. Mok, K. R. C., Mohammadi, V., Nanver, L. K., de Boer, W. D., & Vlooswijk, A. H. G. Low-pressure chemical vapor deposition of PureB layers on silicon for p+ n junction formation. In 12th International Workshop on Junction Technology, Shanghai, China, 113–116 https://doi.org/10.1109/IWJT.2012.6212822 (2012).
2. Nanver, L. K. et al. Pure dopant deposition of B and Ga for ultra-shallow junctions in Si-based devices. ECS Trans. 49, 25 (2012).
3. Mohammadi, V. et al. VUV/low-energy-electron Si photodiodes with post-metal 400 °C PureB deposition. IEEE Electron. Device Lett. 34, 1545. https://doi.org/10.1109/LED.2013.2287221 (2013).
4. Nanver, L. K. et al. Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS compatibility. IEEE J. Sel. Top. Quantum Electron. 20, 306–316. https://doi.org/10.1109/JSTQE.2014.2319582i (2014).
5. Qi, L. & Nanver, L. K. Conductance along the interface formed by 400 °C pure boron deposition on silicon. IEEE Electron. Device Lett. 36(15102) https://doi.org/10.1109/LED.2014.2386296 (2015).
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