Author:
Wu Chia-Ching,Yang Cheng-Fu
Abstract
AbstractStrontium bismuth tantalate vanadate [SrBi2(Ta2−xVx)O9, SBTV] ceramics, which are bismuth-layered perovskite ferroelectrics, were synthesized through the solid-state reaction method. The effects of different sintering temperatures and V2O5 contents on the structure of the microstructure, Raman spectrum, and dielectric properties of the SBTV ceramics were investigated. As sintered at high temperature (980–1040 °C) and different V2O5 contents (x = 0.1 − x = 0.4), only disk-like grains of the SBTV ceramics were observed in the scanning electron micrographs. Preferential orientation of the crystals of the SBTV ceramics was confirmed through X-ray diffraction studies. The higher dielectric constant and Curie temperature of the SBTV ceramics compared with those of strontium bismuth tantalite (SrBi2Ta2O9, SBT) ceramics are ascribe to the partial replace of Ta5+ ions by V5+ ions in the B sites. The Curie–Weiss law and the modified Curie–Weiss law were used to discuss the normal-type or relaxor-type ferroelectric characteristic of the SBTV ceramics. The Ta5+ ion replaced by V5+ ion site in SBT ceramics to form SBTV ceramics exerted a pronounced effect on the BO6 mode, as demonstrated by Raman spectrum results.
Publisher
Springer Science and Business Media LLC
Reference32 articles.
1. Haertling, G. H. Ferroelectric ceramics: History and technology. J. Am. Ceram. Soc. 82, 797–818 (1999).
2. Hwang, S. K., Bae, I., Kim, R. H. & Park, C. Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation. Adv. Mater. 24, 5910–5914 (2012).
3. Zhang, W., Takahashi, M. & Sakai, S. Investigation of ferroelectric grain sizes and orientations in Pt/CaxSr1–xBi2Ta2O9/Hf–Al–O/Si high performance ferroelectric-gate field-effect-transistors. Materials 12, 1–14 (2019).
4. Huang, C. H. et al. Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr0.8Bi2.5Ta1.2Nb0.8O9 thin films. J. Eur. Ceram. Soc. 24, 2471–2476 (2004).
5. Ustinov, A. B., Srinivasan, G. & Kalinikos, B. A. High-Q active ring microwave resonators based on ferrite-ferroelectric layered structures. Appl. Phys. Lett. 92, 193512–219354 (2008).
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