Coupling strategy between high-index and mid-index micro-metric waveguides for O-band applications

Abstract

AbstractThe integration of fast and power efficient electro-absorption modulators on silicon is of utmost importance for a wide range of applications. To date, Franz-Keldysh modulators formed of bulk Ge or GeSi have been widely adopted due to the simplicity of integration required by the modulation scheme. Nevertheless, to obtain operation for a wider range of wavelengths (O to C band) a thick stack of Ge/GeSi layers forming quantum wells is required, leading to a dramatic increase in the complexity linked to sub-micron waveguide coupling. In this work, we present a proof-of-concept integration between micro-metric waveguides, through the butt-coupling of a $${1.25}\,{\upmu \hbox {m}}$$ 1.25 μ m thick N-rich silicon nitride (SiN) waveguide with a $${1.25}\,{\upmu \hbox {m}}$$ 1.25 μ m thick silicon waveguide for O-band operation. A numerical analysis is conducted for the design of the waveguide-to-waveguide interface, with the aim to minimize the power coupling loss and back-reflection levels. The theoretical results are compared to the measured data, demonstrating a coupling loss level of $${0.5}\,\hbox {dB}$$ 0.5 dB for TE and TM polarisation. Based on the SiN-SOI interconnection simulation strategy, the simulation results of a quantum-confined Stark effect (QCSE) stack waveguide coupled to a SiN waveguide are then presented.