Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-04451-9.pdf
Reference38 articles.
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4. Nakajima, A., Futatsugi, T., Kosemura, K., Fukano, T. & Yokoyama, N. Si Single Electron Tunneling Transistor with Nanoscale Floating Dot Stacked on a Coulomb Island by Self-Aligned Process. Appl. Phys. Lett. 71, 353–355 (1997).
5. Fulton, T. A., Gammel, P. L., Bishop, D. J., Dunkleberger, L. N. & Dolan, G. J. Observation of Combined Josephson and Charging Effects in Small Tunnel Junction Circuits. Phys. Rev. Lett. 63, 1307–1310 (1989).
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