Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene
Author:
Funder
National Research Foundation of Korea
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-40675-7.pdf
Reference45 articles.
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5. Yoon, Y., Ganapathi, K. & Salahuddin, S. How Good Can Monolayer MoS2 Transistors Be? Nano Lett. 11, 3768–3773 (2011).
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