A broadband photodetector based on Rhodamine B-sensitized ZnO nanowires film

Author:

Bai Zheng Qi,Liu Ze Wen

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Reference43 articles.

1. Chen, K. J., Hung, F. Y. & Chang, S. J. et al. Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films. Journal of Alloys and Compounds 479(1), 674–677 (2009).

2. Liu, C. Y., Zhang, B. P. & Lu, Z. W. et al. Fabrication and characterization of ZnO film based UV photodetector. Journal of Materials Science: Materials in Electronics 20(3), 197–201 (2009).

3. Ohtomo, A. & Kawasaki, M. Novel semiconductor technologies of ZnO films towards ultraviolet LEDs and invisible FETs. IEICE transactions on electronics 83(10), 1614–1617 (2000).

4. Martel, R., Schmidt, T., Shea, H. R., Hertel, T. & Avouris, P. H. Single- and multi-wall carbon nanotube field-effect transistors. Appl. Phys. Lett. 73, 2447–2449 (1998).

5. Aoki, T., Hatanaka, Y. & Look, D. C. ZnO diode fabricated by excimer-laser doping. Applied Physics Letters 76(22), 3257–3258 (2000).

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