Author:
Elmahjoubi A.,Shoker M. B.,Pagès O.,Torres V. J. B.,Polian A.,Postnikov A. V.,Bellin C.,Béneut K.,Gardiennet C.,Kervern G.,En Naciri A.,Broch L.,Hajj Hussein R.,Itié J.-P.,Nataf L.,Ravy S.,Franchetti P.,Diliberto S.,Michel S.,Abouais A.,Strzałkowski K.
Abstract
AbstractThe emerging CdTe–BeTe semiconductor alloy that exhibits a dramatic mismatch in bond covalency and bond stiffness clarifying its vibrational-mechanical properties is used as a benchmark to test the limits of the percolation model (PM) worked out to explain the complex Raman spectra of the related but less contrasted Zn1−xBex-chalcogenides. The test is done by way of experiment ($$x\le 0.11$$
x
≤
0.11
), combining Raman scattering with X-ray diffraction at high pressure, and ab initio calculations ($$x$$
x
~ 0–0.5; $$x$$
x
~1). The (macroscopic) bulk modulus $${B}_{0}$$
B
0
drops below the CdTe value on minor Be incorporation, at variance with a linear $${B}_{0}$$
B
0
versus $$x$$
x
increase predicted ab initio, thus hinting at large anharmonic effects in the real crystal. Yet, no anomaly occurs at the (microscopic) bond scale as the regular bimodal PM-type Raman signal predicted ab initio for Be–Te in minority ($$x$$
x
~0, 0.5) is barely detected experimentally. At large Be content ($$x$$
x
~1), the same bimodal signal relaxes all the way down to inversion, an unprecedented case. However, specific pressure dependencies of the regular ($$x$$
x
~0, 0.5) and inverted ($$x$$
x
~1) Be–Te Raman doublets are in line with the predictions of the PM. Hence, the PM applies as such to Cd1−xBexTe without further refinement, albeit in a “relaxed” form. This enhances the model’s validity as a generic descriptor of phonons in alloys.
Funder
Foundation for Science and Technology, Portugal
Publisher
Springer Science and Business Media LLC
Reference62 articles.
1. Powalla, M. et al. Thin-film solar cells exceeding 22% solar cell efficiency: An overview on CdTe-, Cu(In, Ga)Se2-, and perovskite-based materials. Appl. Phys. Rev. 5, 041602 (2018).
2. Adachi, S. Properties of semiconductor alloys: Group-IV, III–V and II–VI (Wiley, 2009).
3. Christensen, N. E., Satpathy, S. & Pawlowska, Z. Bonding and ionicity in semiconductors. Phys. Rev. B 36, 1032–1050 (1987).
4. Vérié, C. Beryllium substitution-mediated covalency engineering of II-VI alloys for lattice elastic rigidity reinforcement. J. Cryst. Growth 184(185), 1061–1066 (1998).
5. Weyers, M., Sato, M. & Ando, H. Red shift of photoluminescence and absorption in dilute GaAsN alloy layers. Jpn. J. Appl. Phys. 31, L853–L855 (1992).