Pulsed photo-ionization spectroscopy of traps in as-grown and neutron irradiated ammonothermally synthesized GaN
Author:
Funder
Lietuvos Mokslo Taryba
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-38138-6.pdf
Reference32 articles.
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2. Bockowski, M. et al. Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds. Semicond. Sci. Technol. 31, 93002 (2016).
3. Wang, J., Mulligan, P., Brillson, L. & Cao, L. R. Review of using gallium nitride for ionizing radiation detection. Appl. Phys. Rev. 2, 31102 (2015).
4. D’Evelyn, M. P. et al. Bulk GaN crystal growth by the high-pressure ammonothermal method. J. Cryst. Growth 300, 11–16 (2007).
5. Dwiliński, R. et al. Excellent crystallinity of truly bulk ammonothermal GaN. J. Cryst. Growth 310, 3911–3916 (2008).
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